2N6660 PDF

2N MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 2N MOSFET. 2N – Microchip Technology | 2NMC-ND DigiKey Electronics · 2N; Microchip Technology; MOSFET N-CH 60V A TO; Unit Price. The 2N is a 60V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.

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2N6660 MOSFET. Datasheet pdf. Equivalent

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By selecting your country, you will have a much more streamlined shopping experience Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

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Thank you for your feedback. The foregoing information relates to product sold on, or after, the date shown below. For pricing and availability, n26660 Microchip Local Sales. The Manufacturers and RS reserve the right to 26660 this Information at any time without notice. The product detailed below complies with the specifications published by RS Components.


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2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search

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N-channel MOSFET,2N6660 1A 60V

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Only show products with samples. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Save to parts list Save to parts list. Application Notes Download All.

The product does 2n66600 contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. The Manufacturers and RS disclaim all warranties including implied warranties of merchantability or fitness for a particular purpose and are not liable for any damages arising from your use of or your inability to use the Information downloaded from this website.


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2N Vishay | N-channel MOSFET,2N 1A 60V | | Welcome to RS Israel Online

By clicking the accept button below, you agree to the following terms. Vertical DMOS FETs are ideally suited to a wide 2n6606 of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Japan South Korea Taiwan English. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. North America Canada Mexico. You have chosen to save the following item to a parts list:.